Quantum-well width dependence of threshold current density in InGaN lasers
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چکیده
منابع مشابه
Ultra-low threshold current density quantum dot lasers using the dots-in-a-well (DWELL) structure
Quantum dots laser diodes using the dots-in-a-well (DWELL) structure (InAs dots in an InGaAs quantum wells) have exhibited significant recent progress. With a single InAs dot layer in Inoi5Gao.8sAs quantum well, threshold current densities are as low as 26 A cm2 at 1 .25 xm. Quantum dot laser threshold current densities are now lower than any other reported semiconductor laser. In this work, th...
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LUDWIG, R., P I E P ~ , w., and WEBER, H. G.: ‘Photonic ATM switching with semiconductor laser amplifier gates’, Electron. Lett., 1992, 28, (15), pp. 1438-1439 SAXTOFT, c.: ‘Photonic packet switch experiment employing a 2 t 2 switch matrix and a semiconductor laser amplifier’. Proc. Photonic Switching Topical Meeting, Kobe, Japan, 1990, Postdeadline Paper 14B-7 4 FORTENBERRV, R. M., LOWERY, A. ...
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ژورنال
عنوان ژورنال: Applied Physics Letters
سال: 1999
ISSN: 0003-6951,1077-3118
DOI: 10.1063/1.124336